CHEN Dong-Qiong
,
WANG Hai-Peng
,
QIN Qiang
,
DENG Gong-Rong
,
SHANG Fa-Lan
,
TAN Ying
,
KONG Jin-Cheng
,
HU Zan-Dong
,
TAI Yun-Jian
,
YUAN Jun
,
ZHAO Peng
,
ZHAO Jun
,
YANG Wen-Yun
2022, 41(5):810-817.
DOI: 10.11972/j.issn.1001-9014.2022.05.003
Abstract:The carrier lifetimes determined by radiative and Auger 1 recombination in InAs1-xSbx were calculated at different temperatures. For n-type InAsSb material, at low temperatures, the carrier lifetime is limited by the radiative recombination, while at high temperatures, the Auger 1 process is dominant. An analytical model of dark current for barrier blocking detectors was discussed, by adding a heavily doped n-type InAsSb electrode on the other side of the absorber layer to form an nBnn+ structure to deplete the carriers in absorber, the hole concentration in absorption region was decreased about two orders of magnitude, further reducing the dark current of the devices. InAsSb-based nBnn+ barrier devices have been successfully fabricated and characterized. At 150 K, the devices displayed a dark current density as low as 3×10-6 A/cm2, the dark current density of the detectors was fitted by the nBn-based architecture analytical current model, the experimental results indicated that due to the p-type doping of the barrier layer, a depletion region was formed in the InAsSb absorber region, resulting in incomplete inhibition of G-R current. At temperatures below 180 K, the dark current of the detector is limited by G-R process, at temperatures above 180 K, the dark current of the device is limited by diffusion current.
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