Abstract:从理论和实验两方面简要评述了ｐ－ＧａＡｓ和Ｓｉ同质结界面功函数内光发射（ＨＩＷＩＰ）远红外（〉４０μｍ）探测器的最新的发展，重点讨论了此探测器的光响应机制和探测器性能。结果表明，ｐ－ＧａＡｓ和Ｓｉ的ＨＩＷＩＰ远红外探测器有希望成为远红外应用中具有强大竞争力的器件。

Abstract:By studying the numerical calculation of the stochastic-dynamics equation of the laser-DNA interaction,it was found that with the approximation of small signal and adiabatic hypothesis and under suitable conditions,the stochastic chaos will occur in the laser-DNA interactive system. The appearance of stochastic chaos is related to the intensity of laser. When it is very weak there is no chaos and this suggests that small intensity of laser does not make DNA mutate. When laser intensity reaches a certain value,chaos appears and makes DNA mutate. With the increase of laser intensity,the characteristic of chaos in the evolution process of system becomes more and more significant. However,laser intensity can not be too strong,otherwise it will cause very complex chaos that makes a severe problem of uncertainty in laser breeding and brings uncontrollable results instead of inducing DNA to mutate. The influence of the periodical change of environment on laser-DNA interactive system was discussed,too.

Abstract:对常规傅里叶变换发光测量方法进行改进，引入双调制技术，消除了室温背景黑体辐射在４μｍ至５μｍ以上区域对光致发光测量带来的严重干扰，在１０μｍ红外波段得到了组分ｘ＝０．２１窄禁带ＨｇＣｄＴｅ的光致发光光谱，对光谱的主要结构地进行了指认，发现存在于这种材料中的４ｍｅＶ的杂质能级，其来源是材料中的浅杂质。

Abstract:利用退火技术，实现了在低温ＧａＡｓ外延层上ＩｎＡｓ量子点的生长。透射电镜（ＴＥＭ）研究表明，低温ＧａＡｓ外延层上生长的ＩｎＡｓ量子点比通常生长的ＩｎＡｓ量子眯明显变小，且密度变大，认为是由于低温ＧａＡｓ中的点缺陷以及Ａｓ沉淀引起的：点缺陷释放了部分弹性能，使得量子点变小，而Ａｓ沉淀可能是量子点密度变大的原因。在光致发光谱（ＰＬ）上，退火低温外延层上生长的量子点的发光峰能量较高，且半高宽变窄。

Abstract:报道了用离子注入方法和组合技术制备的ＡｌＧａＡｓ／ＧａＡｓ单量子阱多波长发光集成芯片，利用量子阱果面混合原理在同一块ＧａＡｓ衬底片上获得了２０多个发光波长从７８７￣７２４ｎｍ的ＧａＡｓ量子阱发光单元，研究了不同剂量的Ａｓ和Ｈ离子分别单独注入和迭加组合注入对量子阱发光峰位的影响，采用了组事技术和离子注入技术大大筒化了制备工艺过程，这种上发光芯片对于波分复用器件和建立离子注入数据库等方面都有重要的意义

Abstract:利用远红外反射光谱和拉曼散射光谱法测量了ＧａＡｓ／ＳｒＴｉＯ３外延单晶薄膜样品，研究了这种新型异结构的晶格振动光学特性。实验结果表明：在钙钛矿型结构的ＳｒＴｉＯ３衬底上外延生长的ＧａＡｓ薄膜具有单晶结构，有与ＧａＡｓ单晶体材料相同的晶格振动特性。

Abstract:采用红外椭辰我谱研究了与ＧａＳｂ衬底近晶格匹配的不同组分ＧａｘＩｎ１－ｘＡｓｙＳｂ１－ｙ样品位于禁带宽度能量位置之上、附近和之下的室温折射率光谱。根据禁带宽度能量位置附近的折射率增强效率确定了ＧａｘＩｎ１－ｘＡｓｙＳｂ１－ｙ样品的禁带宽度，并发现在组分ｘ＝０．２￣０．３之间禁带宽度随组分ｘ近似于线性变化。

Abstract:利用深能级瞬态谱（ＤＬＴＳ）研究了常规分子束外延和原子氢辅助分不外延生长的掺杂Ｓｉ和Ｂｅ的ＧａＡｓ同质结构样品中缺陷的电这特性。发现原以辅助分子束外延生长的样品中缺陷的浓度与常规分子束外延生长的样品相比有明显的降低，这可解释为生长过程中原子对缺陷的原位中和与钝化作用。

Abstract:An adaptive filter is designed in the paper to remove the noise of an image in terms of the principle of least squares and regression model. A method is presented for nonuniformity correction of IR focal plane arrays based on polynomial. The algorithm for the implementation is discussed. Finally effects of correcting image are given.

Abstract:用溶胶－凝胶技术制备了化学组分为５／５０／５０的ＰＬＺＴ非晶薄膜。测试其２００￣８００ｎｍ波长范围的光学透射谱，和２００￣６７０ｎｍ波长范围的椭偏光谱。得到了ＰＬＺＴ（５／５０／５０）非晶薄膜膜厚和光学常数谱（折射率ｎ谱和消光系数κ谱），并与组分为９／６５／３５的ＰＬＺＴ非晶薄膜的吸收边和折射率进行了比较。

Abstract:A new iterative learning algorithm based on the superposition of information was proposed. Because the prototype patterns of synergetic neural network (SNN) has the ability of superposition of information, the new algorithm can modify the prototype patterns using the pattern, of which the recognition rate is the lowest during training as the feedback. The test upon the samples from real environment shows that the new algorithm has the characteristic of strong ability of optimal searching and the shorteness of training time. Additionally, the comparison of training performance between the new algorithm and selection algorithm of prototype patterns based on genetic algorithm(SAPPGA) was made.

Abstract:提出了一种基于肤色区域和多种模板结合的人脸检测方法，该方法能在复杂背景下很好的检测出人脸位置并且不受人脸旋转或侧转的限制本文方法比传统的方法检测速度快、漏检率低，可以在实时系统中应用。

Abstract:为了得到一组局产最优的特征组，提出一种结合分散度和顺序前进法（ＳＦＳ）的特征选择方法。实验结果表明小液矩不变量比Ｚｅｒｎｉｋｅ矩不变量有更好的识别效果，尤其对于形体相似的物体，效果更明显。

Abstract:Based upon the maximum fuzzy partition entropy principle, a novel approach for image segmentation was presented. After the concept of fuzzy partition was introduced briefly, a new definition of fuzzy partition entropy was proposed. A threshold selection approach from gray level histogram through maximizing the entropy of fuzzy partition was put forward. It was demonstrated that KSW entropic thresholding method is just a special case of the approach proposed herein. The experiment was conducted on three real object images. The results show that the proposed approach has better performances than some classical threshold selection methods do.

Abstract:从目材噪声模型以及最大值递归滤波器处法入法，在两种不同的条件下对基于最大值递归滤波器检测进行了详细的性能分析与仿真，得出一系列结论。

Abstract:从密度矩阵运动方程出发，详细地推导了光泵氨分子振动基态远红外激光的增益系数表达式。

Abstract:利用Ａｒ＾＋束溅射沉积技术实现了ＣｄＴｅ薄膜的低温生长，利用电化学方法进行了ＨｇＣｄＴｅ表面自身阳极氧化膜的生长，利用生工的ＣｄＴｅ介质膜和ＨｇＣｄＴｅ表在身阳极氧化膜对ｎ－ＨｇＣｄＴｅ光导器件进行了表面钝化。对两种器件的电阻、各项性能指标进行了测量分析，实验表明得到的ＣｄＴｅ／ＨｇＣｄＴｅ同质量已达到器件实用化水平。