Abstract:基于量子局域模型，用类似Ｋａｎｅ平均场方法和Ｌｉｆｓｈｉｔｚ几率观点获得半导体量子点体系的光荧光谱．对直径为ｄ的半导体量子点尺寸用对数高斯或高斯分布描述，研究表明：光荧光谱的线型在短波边不对称，与实验观测一致；尺寸服从一定的分布导致光荧光峰红移，可用于获得表观激子束缚能；尺寸分布对光荧光峰的宽度起重要作用

Abstract:For the n type semiconductor quantum well with anisotropic electron effective mass, the analytical expressions of oscillator strength of intersubband transition including both bound to bound and bound to extended excited states for the normal incident radiation were given. Taking the AlAs/Ga 1- x Al x As as an example, the influences of the growth direction of the quantum well and the well width on the absorption wavelength and the oscillator strength were investigated.

Abstract:Theoretical predictions of polaron effects on the third harmonic generation in a rectangular quantum wire with an additional parabolic potential were presented. The formula for the third harmonic generation along the wire was derived by the density matrix method. The numerical results were presented for a typical GaAs quantum wire.

Abstract:Hot electron relaxations in GaAs/AlGaAs multiple quantum wells were studied using photoluminescence excitation (PLE) spectroscopy. LO phonon emissions in the quantum wells were observed. A four band Kane model was built to calculate the deformation of sub valence bands due to the mixing effect of heavy and light hole bands. The deformation affects the measured PLE responses. The measured and calculated results show that photo excited electrons can cascade down to the exciton energy state directly by LO phonon emissions.

Abstract:在１３～３００Ｋ温度下研究了稀磁半导体ＺｎＴｅ／Ｚｎ１－ｘＭｎｘＴｅ超晶格的喇曼散射，观测到多个声子喇曼峰．在近共振条件下，峰的强度增强，线宽显著变窄，并观测到更多不同声子组合的喇曼散射峰．计算和分析了超晶格中应力引起的声子频移，与实验结果一致．还分析讨论了观测到的宏观界面模

Abstract:采用栅压比谱的方法，研究了ＧａＡｓ／ＡｌＧａＡｓ异质结中二维电子气（２ＤＥＧ）的回旋共振。观察到由于子能带－朗道能级耦合所引起的回旋共振峰强度随磁场的振荡行为．由回旋共振频率ωｃ确定了子能带电子的回旋共振有效质量ｍ＊，通过对共振峰线形的拟合，获得二维电子气浓度Ｎｓ、电子散射时间τ和迁移率μ．由子能带－朗道能级的共振耦合测量了不同栅压下的多个子能带间的能量间距．讨论了导带非线抛物性对电子回旋共振有效质量的影响

Abstract:Rapid scan Fourier transform spectroscopy was used to study the high frequency dynamic properties of the two dimensional electron gases (2DEG) confined at the interface of heterojunctions or in a quantum well. By using a multi channel voltage supply unit controlled by the spectrometer and accumulating alternately a certain number of scans at two different gate voltages, gate voltage ratio spectra were obtained on samples prepared with metallic front gates. Several fundamental infrared excitations, namely, cyclotron resonance, 2D plasmon and the collective intersubband resonance were observed in these low dimensional systems.

Abstract:The effect of fixed surface charge density on the performance of HgCdTe photoconductive detectors was presented in this study. The calculations show that the fixed surface charges can influence the characteristics of the detector greatly. Optimum of the fixed surface charges governed by the passivation processes can improve the device performance.

Abstract:The photoluminescence of InAs/GaAs submonolayer structure was measured at 15K under hydrostatic pressure up to 8 GPa. At normal pressure, the peak energies of the heavy hole exciton emission have a blue shift with the decrease of the thickness of the InAs layer, and with a narrowing peak width and weakening peak intensity. The pressure behavior of these peaks is similar to that of the GaAs matrix, indicating that the model of quantum well (quantum wire, quantum dot) structure is still valid for InAs/GaAs submonolayer. The increases of the confined energies for electrons and heavy holes are 23 and 42 meV, respectively, for 1/3 monolayer InAs/GaAs sample due to the additional lateral confinement of carriers.

Abstract:The photoluminescence (PL) properties of C 60 doped silica aerogel samples were reported. The samples were prepared by two different doping methods and were characterized by Fourier transform infrared spectroscopy and time of flight mass spectroscopy. The C 60 doped composites were found to be able to emit intense visible light and its peak was blue shifted obviously compared to that of the pure C 60 , under Ar laser (488nm,10mW) excitation at room temperature. The influence of doping methods and annealing process on the light emitting properties of the samples was also discussed.

Abstract:研制了ＬＡＴＧＳ－ＰＶＤＦ热释电复合薄膜，测试分析了膜的介电和热释电性能．制膜过程中加极化电场使复合膜中ＬＡＴＧＳ晶粒的内偏场沿极化场取向，达到既具有好的热释电性又不退极化的目的．用这种复合膜研制的热释电探测器的探测率Ｄ＊（５００Ｋ，１０Ｈｚ）高达１．１２×１０８ｃｍ·Ｈｚ１／２·Ｗ－１．

Abstract:The properties of the surface polaron weakly coupled with surface optical phonons in magnetic field for the polar crystals were studied. The ground state energy of the surface magnetopolaron was derived by using the perturbation and the linear combination operator method. The influence of the interaction between phonons of different wave vectors in the recoil process on the ground state energy of the surface magnetopolaron was discussed.