TiNx thin films were deposited on p-Si(111) substrate by DC magnetron reactive sputtering method . The composition, structure and photoelectric properties of the films were studied by using energy dispersive x-ray spectroscopy (EDX), x-ray diffraction (XRD), UV-visible spectrophotometer, and four-probe resistivity meter. The results show that the atomic ratio N/Ti of the prepared TiNx thin films is close to 1. The preferred orientation of TiNx thin films is obviously influenced by the substrate temperature, and there is a transition of the preferred orientation from (111) to (200) when the substrate temperature is about 240℃. The average reflectivity of films in the near infrared band first increase and then decrease with the increase of substrate temperature, while the resistivity of TiNx thin films decrease rapidly.