A highpower and high beam quality 980nm bottomemitting verticalcavity surfaceemitting laser (VCSEL) with optimized pcontact aperture was reported. A numerical simulation of current density in a large aperture bottomemitting VCSEL with oxidation between the active region and the top ptype mirror was conducted. It is found that the simulated current density profiles of VCSEL are dependent on the oxide aperture diameter and the pcontact diameter. For a fixed oxide aperture diameter, the homogeneous current density of the VCSEL could be realized by optimizing the pcontact diameter. Thus, the edge mode in farfield patterns was suppressed. The farfield divergence angle from a 600 μm diameter VCSEL was suppressed from more than 30° to 15° and no strong sidelobe was observed in farfield pattern when the pcontact diameter decreased from 650 μm to 580 μm. There is a slight rise both in threshold current and optical output power due to the pcontact optimization. The VCSEL device produces the maximum optical output power of 2.01 W with lasing wavelength of 982.6nm by improving the device packaging method.