Terahertz (THz) detectors, serving as the pivotal components for photoelectric conversion, constitute one of the fundamental building blocks in modern information society. Large-area PtTe2 thin films were synthesized via chemical vapor deposition (CVD), enabling the fabrication of THz detectors with varied channel lengths. Characterization results demonstrate that the device response exhibits linear dependence on both bias voltage and incident power, while the responsivity shows an inverse proportionality to channel length and operational frequency. The observed device characteristics align well with theoretical calculations based on the electromagnetic induced well (EIW) mechanism. Notably, EIW-based devices achieve a rapid response time of ~7.6 μs, with noise equivalent power (NEP) below 7.9×10-15 W/Hz0.5 and specific detectivity (D*) exceeding 9×1010 cm·Hz0.5/W under limited bias conditions. These performance metrics surpass those of previously reported semimetallic PtTe2-based detectors.