Room-temperature Highly sensitive Bi2Te3 Terahertz Detector Based on Hot-carrier Photothermoelectric Effect
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Affiliation:

Terahertz Technology Innovation Research Institute,University of Shanghai for Science and Technology

Clc Number:

043

Fund Project:

the National Natural Science Foundation of China

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    Abstract:

    High-performance uncooled terahertz (THz) detectors have a wide range of applications in many technological fields, such as high-rate data communications, real-time imaging, spectroscopy and sensing. However room-temperature THz detectors with high sensitivity and fast response capability are still rare. In recent years, the hot-carrier photothermoelectric (PTE) effect in two-dimensional (2D) materials has been found to be useful for room-temperature, high-speed, and highly sensitive photodetection in the THz and long-wave infrared radiation. In this study, the authors constructed a room-temperature THz detector based on the high-performance 2D layered thermoelectric material Bi2Te3, which employs a bow-tie antenna as an asymmetric light coupler and utilizes the hot-carrier PTE effect to achieve THz detection in zero-bias mode. The results show that the Bi2Te detector exhibits excellent THz detection performance, with a responsivity and noise equivalent power (NEP) of 0.45 A/W, 17 pW/Hz1/2, and a fast response time of 12 μs under 100 GHz radiation, respectively. This work demonstrates the promising application of Bi2Te3 THz detectors based on the hot-carrier PTE effect in realizing high-performance uncooled THz detectors.

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History
  • Received:March 10,2025
  • Revised:April 07,2025
  • Adopted:April 07,2025
  • Online:
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