KANG Ya-Ru
School of Integrated Circuits， University of Chinese Academy of Sciences， Beijing 100049， China;Engineering Research Center for Semiconductor Integrated Technology， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， ChinaDONG Hui
School of Microelectronics， University of Science and Technology of China， Hefei 230026， ChinaLIU Jing
Engineering Research Center for Semiconductor Integrated Technology， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， ChinaHUANG Zhen
Research Center， HuBei Jiufengshan Laboratory， Wuhan 430074， ChinaLI Zhao-Feng
School of Integrated Circuits， University of Chinese Academy of Sciences， Beijing 100049， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， China;Engineering Research Center for Semiconductor Integrated Technology， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， ChinaYAN Wei
Engineering Research Center for Semiconductor Integrated Technology， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， ChinaWANG Xiao-Dong
School of Integrated Circuits， University of Chinese Academy of Sciences， Beijing 100049， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， China;Engineering Research Center for Semiconductor Integrated Technology， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China1.School of Integrated Circuits， University of Chinese Academy of Sciences， Beijing 100049， China;2.Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， China;3.Engineering Research Center for Semiconductor Integrated Technology， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China;4.School of Microelectronics， University of Science and Technology of China， Hefei 230026， China;5.Research Center， HuBei Jiufengshan Laboratory， Wuhan 430074， China
TN386
Supported by the National Natural Science Foundation of China （61971395）
KANG Ya-Ru, DONG Hui, LIU Jing, HUANG Zhen, LI Zhao-Feng, YAN Wei, WANG Xiao-Dong. The physical model， structural fabrication， and DC testing of lateral gate transistor terahertz detectors[J]. Journal of Infrared and Millimeter Waves,2024,43(4):526~532
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