ZHAO Ren-Ze
National Key Lab of High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130022， ChinaGAO Xin
National Key Lab of High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130022， ChinaFU Ding-Yang
National Key Lab of High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130022， ChinaZHANG Yue
National Key Lab of High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130022， ChinaSU Peng
National Key Lab of High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130022， ChinaBO Bao-Xue
National Key Lab of High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130022， ChinaNational Key Lab of High Power Semiconductor Lasers， Changchun University of Science and Technology， Changchun 130022， China
TN248.4
Supported by National Key R&D Project （2017YFB0405100）； National Natural Science Foundation of China （61774024/61964007）； Jilin province science and technology development plan （20190302007GX）
ZHAO Ren-Ze, GAO Xin, FU Ding-Yang, ZHANG Yue, SU Peng, BO Bao-Xue. Characteristic analysis of 1.06 μm long-cavity diode lasers based on asymmetric waveguide structures[J]. Journal of Infrared and Millimeter Waves,2024,43(4):557~562
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