REN Jie
State Key Laboratory of Integrated Optoelectronics， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， ChinaZHEN Zhen
State Key Laboratory of Integrated Optoelectronics， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， ChinaJIN Si-Yue
State Key Laboratory of Integrated Optoelectronics， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， ChinaHAN Hai-Long
State Key Lab of Functional Materials for Informatics， Shanghai Institute of Microsystem and Information Technology （SIMIT）， Chinese Academy of Sciences ， Shanghai 200050， China;CAS Center for Excellence in Superconducting Electronics （CENSE）， Shanghai 200050， ChinaYUAN Pu-Sheng
State Key Lab of Functional Materials for Informatics， Shanghai Institute of Microsystem and Information Technology （SIMIT）， Chinese Academy of Sciences ， Shanghai 200050， China;CAS Center for Excellence in Superconducting Electronics （CENSE）， Shanghai 200050， ChinaLI Ling-Yun
State Key Lab of Functional Materials for Informatics， Shanghai Institute of Microsystem and Information Technology （SIMIT）， Chinese Academy of Sciences ， Shanghai 200050， China;CAS Center for Excellence in Superconducting Electronics （CENSE）， Shanghai 200050， ChinaYOU Li-Xing
State Key Lab of Functional Materials for Informatics， Shanghai Institute of Microsystem and Information Technology （SIMIT）， Chinese Academy of Sciences ， Shanghai 200050， China;CAS Center for Excellence in Superconducting Electronics （CENSE）， Shanghai 200050， ChinaWANG Zhen
State Key Lab of Functional Materials for Informatics， Shanghai Institute of Microsystem and Information Technology （SIMIT）， Chinese Academy of Sciences ， Shanghai 200050， China;CAS Center for Excellence in Superconducting Electronics （CENSE）， Shanghai 200050， ChinaXU Xing-Sheng
State Key Laboratory of Integrated Optoelectronics， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China;Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， China1.State Key Laboratory of Integrated Optoelectronics， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China;2.Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， China;3.State Key Lab of Functional Materials for Informatics， Shanghai Institute of Microsystem and Information Technology (SIMIT)， Chinese Academy of Sciences ， Shanghai 200050， China;4.CAS Center for Excellence in Superconducting Electronics (CENSE)， Shanghai 200050， China
O514.2;O433;O4-34;O551.1;O47
Projects were supported by the National Natural Science Foundation of China （ 61875252， 92165202）， the Strategic Priority Research Program （A） of Chinese Academy of Sciences （XDA18040300）.
REN Jie, ZHEN Zhen, JIN Si-Yue, HAN Hai-Long, YUAN Pu-Sheng, LI Ling-Yun, YOU Li-Xing, WANG Zhen, XU Xing-Sheng. A method to evaluate the thermal resistance of a laser by wavelength hysteresis[J]. Journal of Infrared and Millimeter Waves,2023,42(3):377~382
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