III-V compound semiconductors have abundant features for various electronic， optoelectronic and photonic applications， all arise from variform magic combination of group III and group V elements formed binaries， resulting in ever-changing characteristics. In this paper， diversified ternaries， quaternaries and quinaries are presented geometrically based on the binaries of arsenide， phosphide and antimonide， mainly concerned of their bandgap， lattice constant and the lattice match domain on different substrates. The features of nitride and dilute nitride， bismide and dilute bismuth， as well as boride， are also discussed briefly. An overall observation of whole III-Vs may contribute to the comprehensive understanding of their latent capacity and sustainable development， along with a lot of challenges.