HUANG Wei-Guo
Key Laboratory of Terahertz Technology， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， Shanghai 200050， China;University of Chinese Academy of Science， Beijing 100049， ChinaGU Yi
Key Laboratory of Terahertz Technology， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， Shanghai 200050， China;State Key Laboratory of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;University of Chinese Academy of Science， Beijing 100049， ChinaJIN Yu-Hang
State Key Laboratory of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaLIU Bo-Wen
State Key Laboratory of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaGONG Qian
Key Laboratory of Terahertz Technology， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， Shanghai 200050， ChinaHUANG Hua
Key Laboratory of Terahertz Technology， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， Shanghai 200050， ChinaWANG Shu-Min
Department of Microtechnology and Nanoscience， Chalmers University of Technology， Gothenburg SE-41296， SwedenMA Ying-Jie
Key Laboratory of Terahertz Technology， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， Shanghai 200050， China;State Key Laboratory of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaZHANG Yong-Gang
Key Laboratory of Terahertz Technology， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， Shanghai 200050， China;State Key Laboratory of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China1.Key Laboratory of Terahertz Technology， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， Shanghai 200050， China;2.State Key Laboratory of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;3.Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;4.University of Chinese Academy of Science， Beijing 100049， China;5.Department of Microtechnology and Nanoscience， Chalmers University of Technology， Gothenburg SE-41296， Sweden
TN215
Supported by the National Natural Science Foundation of China （Nos. 62075229 and 61775228）， and the International Science and Technology Cooperation Program of Shanghai （No.20520711200）
HUANG Wei-Guo, GU Yi, JIN Yu-Hang, LIU Bo-Wen, GONG Qian, HUANG Hua, WANG Shu-Min, MA Ying-Jie, ZHANG Yong-Gang. InAs quantum wells grown on GaP/Si substrate with Ga(In, As)P metamorphic buffers[J]. Journal of Infrared and Millimeter Waves,2022,41(1):253~261
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