1.Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2.State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;4.University of Chinese Academy of Science, Beijing 100049, China;5.Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, Sweden
TN215
Supported by the National Natural Science Foundation of China (Nos. 62075229 and 61775228), and the International Science and Technology Cooperation Program of Shanghai (No.20520711200)
HUANG Wei-Guo, GU Yi, JIN Yu-Hang, LIU Bo-Wen, GONG Qian, HUANG Hua, WANG Shu-Min, MA Ying-Jie, ZHANG Yong-Gang. InAs quantum wells grown on GaP/Si substrate with Ga(In, As)P metamorphic buffers[J]. Journal of Infrared and Millimeter Waves,2022,41(1):253~261
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