Cathodoluminescence(CL) analysis of ZnSe crystal from 350 nm to 850nm at room temperature
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Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083 ,China

Clc Number:

078

Fund Project:

Supported by National Key R&D Project(2016YFB0500600)

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    Abstract:

    As-received ZnSe crystal has been examined by cathodoluminescence spectroscopy ranging from 350nm to 850nm at room temperature for internal defects and inclusions. Two cathodoluminescence peaks of 462nm and 453nm were detected,of which the former was identified as intrinsic cathodoluminescence of ZnSe and the latter was caused by the crystal defect. The Zn:Se ratio of 6:4 was found by energy dispersive x-ray spectroscopy(EDS),and the extrinsic cathodoluminescence peak of 453nm was attributed to additional Zn in excess of ZnSe stoichiometry.

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WANG Reng, JIAO Cui-Ling, LU Ye, HUO Qin, QIAO Hui, LI Xiang-Yang. Cathodoluminescence(CL) analysis of ZnSe crystal from 350 nm to 850nm at room temperature[J]. Journal of Infrared and Millimeter Waves,2020,39(5):603~606

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History
  • Received:November 01,2019
  • Revised:August 20,2020
  • Adopted:December 09,2019
  • Online: August 18,2020
  • Published:
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