An electrical equivalent test method for thermal parameters of a diode type infrared thermal detector
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1.Integrated Circuit Advanced Process R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China;2.University of Chinese Academy of Sciences, Beijing 100049, China;3.Wuxi Innovation Center for Internet of Things, Wuxi 214028,China

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National Natural Science Foundation of China 61601455 61874137;the Key R&D Program of Beijing Municipal Science and Technology Commission Z191100010618005Supported by National Natural Science Foundation of China (61601455, 61874137), the Key R&D Program of Beijing Municipal Science and Technology Commission(Z191100010618005)

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    Abstract:

    Thermal parameters of infrared thermal detector include thermal capacity, thermal conductance and thermal response time, reflecting the structure information and performance of detector. Accurate and effective measurement of these thermal parameters is important for device performance evaluation and optimization. A diode-type infrared detector is an important infrared detector. Based on the self-heating effect of diode-type infrared heat detectors, an equivalent electrical test method was developed. The method has the advantages of high precision and easy implementation. The pixel of the self-made diode-type infrared focal plane array was tested by this method. The results were in good agreement with the theoretical analysis, and the feasibility of the method was verified.

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LIU Chao, HOU Ying, FU Jian-Yu, LIU Rui-Wen, WEI De-Bo, CHEN Da-Peng. An electrical equivalent test method for thermal parameters of a diode type infrared thermal detector[J]. Journal of Infrared and Millimeter Waves,2019,38(6):798~804

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History
  • Received:March 30,2019
  • Revised:November 14,2019
  • Adopted:August 22,2019
  • Online: December 17,2019
  • Published:
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