The influence of sulfide passivation on optical properties of InAs nanowires

doi:10.11972/j.issn.1001 -9014.2019.05.008

Home > Archive>Volume 38, Issue 5, 2019 >591-597. DOI:10.11972/j.issn.1001 -9014.2019.05.008

The influence of sulfide passivation on optical properties of InAs nanowires
DOI:
                        10.11972/j.issn.1001 -9014.2019.05.008
                    
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                        LI Bao-Bao1LI Bao-Bao
School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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LI Sheng-Juan1LI Sheng-Juan
School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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CHEN Gang2CHEN Gang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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LI Shi-Min2LI Shi-Min
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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WANG Xing-Jun2WANG Xing-Jun
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Affiliation:1.School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Clc Number:TN304.2
Fund Project:the National Natural Science Foundation of China 11874377;the Natural Science Foundation of Shanghai 18ZR1445700Supported by the National Natural Science Foundation of China (11874377); the Natural Science Foundation of Shanghai (18ZR1445700)

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Abstract:

To solve the problem of low luminescence efficiency caused by the surface oxidation of InAs nanowires, C₁₈H₃₈S and (NH₄)₂S were adopted to passivate zinc blende (ZB) InAs nanowires synthesized by chemical vapor deposition (CVD). Photoluminescence (PL) spectra of (before and after sulfide passivation) InAs nanowires were performed. The experimental results show that the PL emission efficiency of C₁₈H₃₈S and (NH₄)₂S passivated InAs nanowires are ~ 6 times and ~ 7 times higher than that of unpassivated InAs nanowires at 25 K, respectively, in addition, the PL of (NH₄)₂S passivation InAs nanowires is detected at room temperature, which provides a possibility for future InAs nanowires based middle infrared nanophoton devices.

Key words:InAs nanowires;sulfide;surface states;photoluminescence

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LI Bao-Bao, LI Sheng-Juan, CHEN Gang, LI Shi-Min, WANG Xing-Jun. The influence of sulfide passivation on optical properties of InAs nanowires[J]. Journal of Infrared and Millimeter Waves,2019,38(5):591~597

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Received:March 18,2019
Revised:July 02,2019
Adopted:April 17,2019
Online: August 31,2019
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