To solve the problem of low luminescence efficiency caused by the surface oxidation of InAs nanowires, C₁₈H₃₈S and (NH₄)₂S were adopted to passivate zinc blende (ZB) InAs nanowires synthesized by chemical vapor deposition (CVD). Photoluminescence (PL) spectra of (before and after sulfide passivation) InAs nanowires were performed. The experimental results show that the PL emission efficiency of C₁₈H₃₈S and (NH₄)₂S passivated InAs nanowires are ~ 6 times and ~ 7 times higher than that of unpassivated InAs nanowires at 25 K, respectively, in addition, the PL of (NH₄)₂S passivation InAs nanowires is detected at room temperature, which provides a possibility for future InAs nanowires based middle infrared nanophoton devices.