ELECTRICAL BEHAVIOR OF LIGHT MODULATOR IN GaAS/GaAlAs SINGLE QUANTUM WELL STRUCTURE
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TN761

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    Abstract:

    The electrical behavior of light modulator in GaAs/GaAlAs single quantum wen was investigated by using admittance spectroscopy technique. The physical phenomenon of delocalization in the electron and hole subbands of quantum well under electric field was observed.

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Zhou Jie, Feng Songlin, Lu Liwu, Sun Jinglan. ELECTRICAL BEHAVIOR OF LIGHT MODULATOR IN GaAS/GaAlAs SINGLE QUANTUM WELL STRUCTURE[J]. Journal of Infrared and Millimeter Waves,1994,13(1):65~68

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