Simulation of profile evolution in HgCdTe ion beam etching by the level set method

doi:10.11972/j.issn.1001-9014.2019.03.013

Home > Archive>Volume 38, Issue 3, 2019 >331-337. DOI:10.11972/j.issn.1001-9014.2019.03.013

Simulation of profile evolution in HgCdTe ion beam etching by the level set method
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                        10.11972/j.issn.1001-9014.2019.03.013
                    
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                        LIU Xiang-Yang1,2,3,4,5,6LIU Xiang-Yang
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical
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XU Guo-Qing1XU Guo-Qing
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical
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JIA Jia1JIA Jia
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical
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SUN Yan7SUN Yan
National Laboratory for Infrared Physics
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LI Xiang-Yang1LI Xiang-Yang
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical
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Affiliation:1.Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical;2.Physics,Chinese Academy of Sciences;3.China University of Chinese;4.Academy of Sciences;5.China National Laboratory for Infrared Physics,Shanghai Institute of Technical,Chinese Academy of Sciences;6.China;7.National Laboratory for Infrared Physics
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Abstract:

A numerical model was established by the level set method to simulate the etching profile evolution in HgCdTe ion beam etching. The input parameters are: mask thickness、the slope of mask sidewall、trench width、ion angular distributions, etching speed, et al. Etching lag and etching profile of HgCdTe were simulated and compared with experimental results. The results shows that, given nominal trench width 4?10?m, the errors between simulated etch depths and that of experiments are 6~20%. The profile evolution of etching mask was simulated and an example was given to illustrate how to design the mask thickness to improve the aspect ratio.

Key words:HgCdTe, ion;beam, etching;profile, the;level set;method, etch;lag , aspect;ratio

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LIU Xiang-Yang, XU Guo-Qing, JIA Jia, SUN Yan, LI Xiang-Yang. Simulation of profile evolution in HgCdTe ion beam etching by the level set method[J]. Journal of Infrared and Millimeter Waves,2019,38(3):331~337

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Received:January 23,2018
Revised:April 19,2018
Adopted:April 23,2018
Online: July 02,2019
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