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Home > Archive>Volume 37, Issue 1, 2018 >15-19. DOI:10.11972/j.issn.1001-9014.2018.01.004
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High-frequency InAlN/GaN HFET with an fT of 350 GHz
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Southeast University,National Key Laboratory of Application Specific Integrated Circuit (ASIC),Hebei Semiconductor Research Institute,Southeast University,Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated Circuit (ASIC),National Key Laboratory of Application Specific Integrated Circuit (ASIC)

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    Abstract:

    Scaled InAlN/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (fT) were realized by employing nonalloyed regrown n+-GaN Ohmic contacts, in which the source-to-drain distance (Lsd) was scaled to 600 nm. By processing optimization of dry etching and n+-GaN regrowth, a low total Ohmic resistance of 0.16 Ω·mm is obtained, which is a recorded value regrown by metal organic chemical vapor deposition (MOCVD). A 34 nm rectangular gate was fabricated by self-aligned-gate technology. The electrical characteristics of the devices, especially for the RF characteristics, were improved greatly after the reduction of ohmic resistance and gate length. The fabricated InAlN/GaN HFETs show a low on resistance (Ron) of 041 Ω·mm and a high drain saturation current density of 2.14 A/mm at Vgs=1 V. Most of all, the device shows a high fT of 350 GHz, which is a recorded result reported for GaN-based HFETs in domestic.

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FU Xing-Chang, LYU Yuan-Jie, ZHANG Li-Jiang, ZHANG Tong, LI Xian-Jie, SONG Xu-Bo, ZHANG Zhi-Rong, FANG Yu-Long, FENG Zhi-Hong. High-frequency InAlN/GaN HFET with an fT of 350 GHz[J]. Journal of Infrared and Millimeter Waves,2018,37(1):15~19

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History
  • Received:July 04,2017
  • Revised:August 28,2017
  • Adopted:September 04,2017
  • Online: March 19,2018
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