Carbon (C) atoms can be replaced by other atoms in specifically designed spots to regulate the properties of graphene. This is established by introducing impurities such as B and N into graphene. The band gap can be opened while the Dirac cone shifts above or below the Fermi level. This behavior is the same as p-type or n-type doping in semiconductors. Electronic states are observed at the Fermi level, and the charges are transferred from the impurities to C or vice versa. The static dielectric function ε1(0) increases greatly, a new absorption peak appears in the low-energy region corresponding to visible light and the following energy. The decrease in plasma excitation due to the B or N doping results in a reduction of the number of peaks in the electron energy loss function. Only one obvious peak is observed at the same position as that of the highest peal of pristine graphene. The height of this peak increases significantly.