High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type I quantum-wells

doi:10.11972/j.issn.1001-9014.2017.03.001

Home > Archive>Volume 36, Issue 3, 2017 >257-260. DOI:10.11972/j.issn.1001-9014.2017.03.001

High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type I quantum-wells
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                        10.11972/j.issn.1001-9014.2017.03.001
                    
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Affiliation:Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics,Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics,Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics,Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics,Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics,Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics,Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics,Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics
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Abstract:

GaSb-based InGaAsSb/AlGaAsSb type-I quantum-wells (QWs) laser diodes have been successfully fabricated. The wavelength is expanded to 2.6 μm with high output power. The device structures were grown by molecular beam epitaxy. Under the optimized QWs growth temperature of 500℃,the compressive strain of the QWs are defined to 1.3% for better optical quality. With a ridge width of 100μm and cavity length of 1.5 mm, the maximum output power of single facet without coating has reached up to 328 mW under continuous wave (CW) operation at room temperature and 700 mW under pulse condition. The threshold current density is 402 A/ cm2.

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CHAI Xiao-Li, ZHANG Yu, LIAO Yong-Ping, HUANG Shu-Shan, YANG Cheng-Ao, SUN Yao-Yao, XU Ying-Qiang, NIU Zhi-Chuan. High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type I quantum-wells[J]. Journal of Infrared and Millimeter Waves,2017,36(3):257~260

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Received:September 27,2016
Revised:October 19,2016
Adopted:October 24,2016
Online: June 20,2017
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