330GHz GaAs monolithic integrated sub-harmonic mixer

doi:10.11972/j.issn.1001-9014.2017.02.020

Home > Archive>Volume 36, Issue 2, 2017 >252-256. DOI:10.11972/j.issn.1001-9014.2017.02.020

330GHz GaAs monolithic integrated sub-harmonic mixer
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                        10.11972/j.issn.1001-9014.2017.02.020
                    
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                        LIU GeLIU Ge
School of Electronic Engineering,University of Electronic Science and Technology of China
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Zhang BoZhang Bo
School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu
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Zhang Li-senZhang Li-sen
National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute
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Wang Jun-longWang Jun-long
National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute
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Xing DongXing Dong
National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute
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Fan YongFan Yong
School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu
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Affiliation:School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu,School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu,National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute,School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu
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Abstract:

In the terahertz band, diode size can no longer be ignored compared with the wavelength, significant parasitic parameters will be introduced due to diode package, so it is very necessary to establish three-dimensional model to extract parasitic parameters. Meanwhile manual assembly becomes more difficult, circuit uncertainty will increase. A 330GHz GaAs monolithic integrated sub-harmonic mixer based on planar schottky barrier diode designed by China Electronics Technology Group Corporation-13(CETC-13) and University of Electronic Science and Technology of China(UESTC) fabricated on 12um thick suspended GaAs substrate was presented. Test results show that the minimum conversion loss is 10.4dB at 328GHz, SSB conversion loss was less than 14.7dB from 320GHz to 340GHz when the LO power is 5mW.

Key words:terahertz; monolithic integrated sub-harmonic mixer; schottky diode; GaAs; conversion loss;

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LIU Ge, Zhang Bo, Zhang Li-sen, Wang Jun-long, Xing Dong, Fan Yong.330GHz GaAs monolithic integrated sub-harmonic mixer[J]. Journal of Infrared and Millimeter Waves,2017,36(2):252~256

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Received:September 19,2016
Revised:November 11,2016
Adopted:November 15,2016
Online: April 28,2017
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