Watt-class low divergence 2 μm GaSb based broad-area quantum well lasers

doi:10.11972/j.issn.1001-9014.2017.03.006

Home > Archive>Volume 36, Issue 3, 2017 >280-283. DOI:10.11972/j.issn.1001-9014.2017.03.006

Watt-class low divergence 2 μm GaSb based broad-area quantum well lasers
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                        10.11972/j.issn.1001-9014.2017.03.006
                    
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Affiliation:State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Institute of Semiconductors,Chinese Academy of Sciences,State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Institute of Semiconductors,Chinese Academy of Sciences,State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences
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Abstract:

GaSb based broad-area (BA) diode lasers with watt-class emission power and improved divergence were demonstrated using a fishbone shape microstructure. The influences of etching depth of microstructure on the emission and far-field performance were investigated. It was found that the utilization of microstructure was able to enhance the emission power evidently. Moreover, the deeply etched microstructure was more effective on the decrease of mode number and lateral far-field divergence. Compared with the device without microstructure, the deeply etched BA lasers show 57% decrease in the lateral far-field angle defined by the 95% power content, and the maximum continuous-wave (CW) output power exceeds 1.1 W.

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XING En-Bo, RONG Jia-Min, ZHANG Yu, TONG Cun-Zhu, TIAN Si-Cong, WANG Li-Jie, SHU Shi-Li, LU Ze-Feng, NIU Zhi-Chuan, WANG Li-Jun. Watt-class low divergence 2 μm GaSb based broad-area quantum well lasers[J]. Journal of Infrared and Millimeter Waves,2017,36(3):280~283

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Received:August 31,2016
Revised:October 25,2016
Adopted:November 04,2016
Online: June 20,2017
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