High performance Hg1-xCdxTe epitaxial materials with the size of 50 mm×50 mm were produced by Te-rich vertical LPE technology. The sample holder with triangle cylinder structure and a function to prevent HgCdTe solution soaking into the back of the substrates was designed and used to obtain 3 epitaxial materials for each growth process. In order to obtain uniform epilayers, the temperature uniformity and composition uniformity of HgCdTe solution during the process were improved. The STDDEVs for x-value and thickness distributions of 50 mm×50 mm epitaxial material are 0.000 4 and 0.4 μm, respectively. The average values of x-value and thickness of three epitaxial wafers grown at the same time have a very small difference, less than 0.0004 and 0.1 μm, respectively. The differences of average x-values and thickness values from run-to-run are about ±0.002 and ±2 μm, respectively. In order to control the defects of HgCdTe epilayers, the lattice parameters and defects of CdZnTe substrates have been strictly controlled. The full width at half maximum (FWHM) of X-ray double-crystal rocking curve for HgCdTe epilayers was controlled within 30″. The dislocation density is less than 1×105 cm-2, and the surface defect density is less than 5 cm-2. Utilizing annealing technique, the carrier concentration of Hg vacancy doped p-type Hg0.78Cd0.22Te epilayers at 77 K were controlled in a range of 8 ~ 20×1015 cm-3 and their hole mobility exceed 600 cm2/Vs. The material performance and production capacity based on the LPE technique described above can satisfy the demand for fabricating large format HgCdTe infrared focal plane arrays.