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Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI
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Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,Research Department of Microwave and Millimeter Wave Modules,Nanjing Electronic Devices Institute,Nanjing,Research Department of Microwave and Millimeter Wave Modules,Nanjing Electronic Devices Institute,Nanjing,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,Research Department of Microwave and Millimeter Wave Modules,Nanjing Electronic Devices Institute,Nanjing,Research Department of Microwave and Millimeter Wave Modules,Nanjing Electronic Devices Institute,Nanjing,Research Department of Microwave and Millimeter Wave Modules,Nanjing Electronic Devices Institute,Nanjing,Research Department of Microwave and Millimeter Wave Modules,Nanjing Electronic Devices Institute,Nanjing,Research Department of Microwave and Millimeter Wave Modules,Nanjing Electronic Devices Institute,Nanjing

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    Abstract:

    Terahertz Schottky varistor diode with cutoff frequency of 3.2THz was developed based on GaAs process of Nanjing Electronic Devices Institute (NEDI). The performances of diodes are optimized by optimization of active layer (expital layer and buffer layer) doping, thickness, and Schottky contact area. Physical structure of the nonlinear diode was setup, and EM software and circuit software were combined together for impedance matching analysis. For the D-band doubler, highest measured multiply efficiency is 2.7% at 152.6GHz, and typical efficiency is 1.3% in 147.4～155GHz. For the G-band doubler, highest measured multiply efficiency is 2.1% at 172GHz, and typical efficiency is 1.0% in 150～200GHz.

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YAO Chang-Fei, ZHOU Ming, LUO Yun-Sheng, LIN Gang, LI Jiao, XU Cong-Hai, KOU Ya-Nan, WU Gang, WANG Ji-Cai. Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI[J]. Journal of Infrared and Millimeter Waves,2014,33(3):256~262

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History
  • Received:April 17,2013
  • Revised:May 09,2013
  • Adopted:June 05,2013
  • Online: July 30,2014
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