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TThe zero field spin splitting and Zeeman splitting in the In0.53Ga0.47As/In0.52Al0.48As quantum well
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Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Microsystem and Information Technology

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    Abstract:

    The zero-field spin splitting and Zeeman splitting in the In0.53Ga0.47As/In0.52Al0.48As quantum well (QW) were extracted by a Shubnikov-de Haas oscillations (SdH) beating pattern analysis under different tilt angles between QW plane and external magnetic field. It is found that the zero-field spin splitting Δ0 increases with increasing carrier concentration while the effective g-factor |g*| decreases. The further calculation indicated that the decrease of |g*| with concentration is ascribed to the nonparabolic effect of the band structure.

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LIU Xin-Zhi, XU Yong-Gang, YU Guo-Lin, LIN Tie, GUO Shao-Ling, CHU Jun-Hao, ZHANG Yong-Gang. TThe zero field spin splitting and Zeeman splitting in the In0.53Ga0.47As/In0.52Al0.48As quantum well[J]. Journal of Infrared and Millimeter Waves,2014,33(2):134~138

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History
  • Received:January 14,2013
  • Revised:September 07,2013
  • Adopted:January 31,2013
  • Online: May 13,2014
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