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Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering
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National Laboratory for infrared physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,National Laboratory for infrared physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,ShangHai Center for Photovoltaics,ShangHai Center for Photovoltaics,National Laboratory for infrared physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences

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    Abstract:

    Cd1-xZnx Te films were deposited by RF magnetron sputtering from Cd0.96 Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV.

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CAO Hong, CHU Jun-Hao, WANG Shan-Li, WU Yun-Hua, ZHANG Chuan-Jun. Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering[J]. Journal of Infrared and Millimeter Waves,2013,32(2):97~101

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History
  • Received:August 13,2012
  • Revised:December 10,2012
  • Adopted:September 04,2012
  • Online: April 23,2013
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