We report on the design and evaluation of two frequency bandwidth multiplying sources with planar Schottky diodes mounted on quartz thin film circuit. Novel co-simulation approach is used. Full-wave analysis is utilized to find diode deembedding impedances with lumped port to model the nonlinear junction. The doubler circuit is divided into several matching parts for ease of design. Individual parts of the doubler are independently designed and then these parts are combined and optimized simultaneously. The exported S-parameters of the whole circuit are used for multiplying efficiency analysis. For the 150 GHz doubler, the highest measured efficiency is 7.5% at 149.2 GHz and the typical efficiency is 6.0% in 147.4～152 GHz. As for the 180 GHz doubler, the highest measured efficiency is 14.8% at 170 GHz and the typical value in 150～200 GHz is 8.0%.