Simultaneous mode MW/LW two color HgCdTe infrared detector

Home > Archive>Volume 31, Issue 6, 2012 >497-500

Simultaneous mode MW/LW two color HgCdTe infrared detector
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Affiliation:1,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences
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Abstract:

The results of simultaneous-mode 128?128 MW/LW two-color HgCdTe Infrared detector was presented in this paper. The photoresist (PR) spray-coating technology was developed to open the windows of non-planar implantation and metallization of two-color HgCdTe infrared detector. By etching to expose the n-type implantation-region of MW photodiodes, non-planar B -implantation of MW photodiodes and LW photodiodes synchronously, side-wall passivation, side-wall metallization and flip-chip hybridization with Readout Integrated Circuit (ROIC), 128?128 MW/LW two-color HgCdTe Infrared detector was achieved from a triple-layer p3-p2-P1 hetero-junction Hg1-xCdxTe film grown by molecular beam epitaxy. At liquid nitrogen temperature, the cut-off wavelengths of the simultaneous-mode MW/LW two-color Infrared detector were 5.1μm and 10.1μm individually, and the peak detectivities (D?p* ) were2.02?1011cmHz1/2/W and 3.10?1010 cmHz1/2/W respectively. Also the spectral cross-talks of MW-to-LW and LW-to-MW were suppressed to only 3.8% and 4.4% by optimizing the chip structure of the simultaneous-mode two-color infrared detector.

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YE Zhen-Hua, LI Yang, HU Wei-Da, CHEN Lu, LIAO Qin-Jun, CHEN Hong-Lei, LIN Chun, HU Xiao-Ning, DING Rui-Jun, HE Li. Simultaneous mode MW/LW two color HgCdTe infrared detector[J]. Journal of Infrared and Millimeter Waves,2012,31(6):497~500

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Received:August 09,2011
Revised:March 01,2012
Adopted:August 26,2011
Online: November 21,2012
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