GAO Cheng
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy ofYANG Jing
Key Laboratory for Polar Materials and Devices of Ministry of Education, East China Normal University, ShanghaiMENG Xiang-Jian
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy ofBAI Wei
Key Laboratory for Polar Materials and Devices of Ministry of Education, East China Normal UniversityLIN Tie
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy ofSUN Jing-Lan
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy ofCHU Jun-Hao
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy ofNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of,Key Laboratory for Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of,Key Laboratory for Polar Materials and Devices of Ministry of Education, East China Normal University,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of
GAO Cheng, YANG Jing, MENG Xiang-Jian, BAI Wei, LIN Tie, SUN Jing-Lan, CHU Jun-Hao. The effect of Nd doping on microstructure and electrical properties of BiFeO3 thin films[J]. Journal of Infrared and Millimeter Waves,2012,31(1):21~25
Copy