| 铟氧化物对倒装互连质量的影响及去除方法研究 |
| 投稿时间：2024-10-20 修订日期：2024-11-12 点此下载全文 |
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| 中文摘要:倒装互连技术中使用的铟凸点，也称为铟球，是一种在半导体封装中用于实现芯片与基板之间电气连接的材料。铟柱湿法缩球后放置时间过长会导致铟球表面生成氧化物，可以使用金相显微镜快速识别铟氧化物，分析讨论了铟氧化物的存在对倒装互连压力、导通率的影响，提出采用湿法和干法去除氧化物，对去除方法参数进行定量研究，并对去除效果进行测试分析，使得研究结论更加的全面、完善。采用研究方法去除氧化物的电路倒装互连后的探测器有较稳定的性能，为制备高质量高可靠性的探测器做出贡献。 |
| 中文关键词:铟球 氧化物 倒装互连 湿法清洗 干法清洗 |
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| Study of the effect of indium oxide on the quality of flip interconnect and its removal method |
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| Abstract:Indium bumps, also known as indium balls, used in flip interconnect technology, are a material used in semiconductor packages to enable an electrical connection between a chip and a substrate. Leaving the indium column for too long after wet shrinking will cause oxides to form on the surface of the indium balls, and indium oxides can be quickly identified using a metallurgical microscope.In this paper, the influence of the presence of indium oxide on the pressure and conductivity of flip interconnect is analyzed, This article quantitatively studies the parameters of the removal method and tests and analyzes the removal effect, making the research conclusions more comprehensive and complete. The detector obtained by using research methods to remove oxides in circuit inverted interconnects has relatively stable performance, contributing to the preparation of high-quality and highly reliable detectors. |
| keywords:Indium balls Oxides Flip interconnects Wet cleaning Dry cleaning |
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