| 光导型石墨烯探测器暗电流抑制电路研究 |
| 投稿时间：2024-08-23 修订日期：2024-09-04 点此下载全文 |
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| 中文摘要:针对光导型石墨烯探测器暗电流大的特点，本文在分析几种暗电流抑制电路的基础上，基于电容反馈跨阻放大器型（CTIA）积分电路设计一种新型低温度系数暗电流抑制电路。经过仿真分析，该结构具有良好的暗电流抑制能力，相比于传统CTIA结构，积分饱和时间提升显著，并且具有良好的积分均匀性和输出线性度。在-20-40 ℃的温度范围内，电流-温度误差率为0.15％，电压偏移量不到80 mV，能够在室温条件下保持良好的暗电流抑制功能。探测器偏置电压漂移改善88.7%，为探测器稳定工作提供保障。同时，抑制电流的大小可调，对改善石墨烯基探测器像元的不均匀性和未来制备大规模的石墨烯基探测器阵列提供参考。 |
| 中文关键词:光导型 石墨烯 暗电流抑制 CTIA 低温度系数 线性度 |
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| Dark current suppression circuit of photoconductive graphene detectors |
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| Abstract:As to the problem that dark current of graphene-based detector is large, Based on the analysis of several kinds of dark current suppression circuits for photoconductive graphene detectors, a novel dark current suppression circuit with low temperature coefficient is designed based on Capacitive TransImpedence Amplifier (CTIA) integral circuit. Compared with the traditional CTIA structure, the structure has better dark current suppression ability, and has better integral uniformity and output linearity. In the temperature range of -20~40℃, the current-temperature error rate is 0.15% , and the voltage offset is less than 80 mV. The bias voltage drift of the detector is improved by 88.7%, which provides a guarantee for the stable operation of the detector. At the same time, the suppression current is adjustable, which provides reference for improving the nonuniformity of graphene-based detector pixels and preparing large-scale graphene-based detector arrays in the future. |
| keywords:Photoconductive Graphene Dark current suppression CTIA Low temperature coefficient Linearity |
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