Colloidal quantum dots （CQDs） are affected by the quantum confinement effect， which makes their bandgap tunable. This characteristic allows these materials to cover a broader infrared spectrum， providing a cost-effective alternative to traditional infrared detector technology. Recently， thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip， infrared detectors based on HgTe CQDs have shown great application prospects. However， facing the challenges of vertically stacked photovoltaic devices， such as barrier layer matching and film non-uniformity， most devices integrated with readout circuits still use a planar structure， which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers. Here， by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality， we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs. At a working temperature of 80 K， this detector achieved a low dark current of 5.23×10^-9 A cm^-2， a high rectification ratio， and satisfactory detection sensitivity. This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits， demonstrating their great potential in the field of high-performance infrared detection.