We present the design， simulation， and experimental validation of a InP/In_0.53Ga_0.47As laser power converters for the wavelength of 1550 nm. By optimizing the thickness of the absorption layer and using a double-layer anti-reflection structure （SiO₂ and SiN）， By optimizing the thickness of the absorption layer and adopting a dual-layer anti-reflective structure （SiO₂ and SiN）， the device achieved an absorptance of 96% under 1550 nm laser irradiation， demonstrating insensitivity to angle variation and robust to wavelength shifts. The experimental results are in good agreement with the theoretical calculation results. The external quantum efficiency （EQE） reaches 92%. Under a laser power density of 47 mW/cm2， the cell’s conversion efficiency reached 23%. Further refinement of device processing is needed to reduce series and shunt resistances， thereby enhancing the overall efficiency of the laser photovoltaic cell. In addition， this study delves into the impact of cell area on the photovoltaic performance， providing optimization directions for the miniaturization of laser photovoltaic cells.