1.中国科学院上海技术物理研究所 传感技术国家重点实验室，上海 200083;2.中国科学院红外成像材料与器件重点实验室，上海 200083;3.中国科学院大学，北京 100049
TN215
上海市优秀学术/技术带头人计划资助（21XD1404200）；中国科学院重点部署项目（ZDRW-CN-2019-3）；中国科学院联合基金（6141A01170106）；上海市级科技重大专项（2019SHZDZX01）；国家自然科学基金（62075229），国家自然科学基金（62175250）.
CHENG Ji-Feng
State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Chinese Academy of Sciences， Shanghai 200083， China;University of the Chinese Academy of Sciences， Beijing 100049， ChinaWANG Hong-Zhen
State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Chinese Academy of Sciences， Shanghai 200083， China;University of the Chinese Academy of Sciences， Beijing 100049， China1.State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;2.Key Laboratory of Infrared Imaging Materials and Detectors， Chinese Academy of Sciences， Shanghai 200083， China;3.University of the Chinese Academy of Sciences， Beijing 100049， China
Supported by the Program of Shanghai Academic/Technology Research Leader under Grant （21XD1404200），Key deployment projects of the Chinese Academy of Sciences（ZDRW-CN-2019-3），Joint fund of Chinese Academy of Sciences（6141A01170106），the Shanghai Municipal Science and Technology Major Project（2019SHZDZX01） and the National Natural Science Foundation of China（62075229，62175250）
采用闭管扩散的方法成功研制了截止波长2.2 μm的平面型延伸波长InGaAs探测器芯片。在分子束外延法（MBE）生长的In0.75Al0.25As/ In0.75Ga0.25As/ In0.75Al0.25As外延材料上，采用砷化锌作为扩散掺杂源、SiNx作为扩散掩膜层，实现了扩散成结。分析了扩散结深和载流子侧向收集宽度、I-V特性、光谱响应特性和探测率，结果表明：150 K温度下，器件暗电流密度0.69 nA/cm2@-10 mV，响应截止波长和峰值波长分别为2.12 μm和1.97 μm，峰值响应率为1.29 A/W，峰值量子效率达82%，峰值探测率为1.01×1012 cmHz1/2/W。这些结果对后续进一步优化平面型延伸波长InGaAs焦平面探测器有重要的指导意义。
Planar-type 2.2 μm wavelength-extended InGaAs photodetectors （PDs） using the sealed-ampoule diffusion method was reported. The zinc arsenide powder was used as the dopant source， which was driven into the cap of the In0.75Al0.25As/In0.75Ga0.25As/In0.75Al0.25As hetero structure materials grown by molecular beam epitaxy （MBE）， using a SiNx as diffusion mask deposited by ICP-CVD. The junction depth， the lateral collection width of photogenerated carriers， the I-V characteristics， the spectral response and the detectivity of the detector at different temperatures were analyzed. The results indicate that the PD exhibits a low dark current density of 0.69×10-9 A/cm2 at -10 mV at 150 K. The cutoff wavelength and peak wavelength were 2.12 μm and 1.97 μm. The peak detectivity， peak responsivity and quantum efficiency was 1.01×1012 cm·Hz1/2/W， 1.29 A/W and 82% respectively. These results suggest that the planar-type InGaAs can reach high performance.
程吉凤,李雪,邵秀梅,李淘,王红真,马英杰,杨波,龚海梅.截止波长2.2 µm的平面型延伸波长InGaAs探测器[J].红外与毫米波学报,2022,41(5):804~809]. CHENG Ji-Feng, LI Xue, SHAO Xiu-Mei, LI Tao, WANG Hong-Zhen, MA Ying-Jie, YANG Bo, GONG Hai-Mei. Planar wavelength-extended In0.75Ga0.25As detector with 2.2-μm cut-off wavelength[J]. J. Infrared Millim. Waves,2022,41(5):804~809.]
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