1.中国科学院半导体研究所 集成光电子学国家重点实验室，北京 100083;2.中国科学院大学 材料光电研究中心,北京 1001408;3.中国科学院半导体研究所 材料重点实验室,北京 100083
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1.State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 101408, China;3.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
National Key Research and Development Program of China 2016YFA0301200 D171100004817002;the National Natural Science Foundation of China 61575191 61627820 61875252Supported by National Key Research and Development Program of China （2016YFA0301200）, the Beijing Science and Technology Project no.D171100004817002, and the National Natural Science Foundation of China （61575191, 61627820, 61875252）
秦璐,徐波,许兴胜.利用大周期光子晶体结构增强InAs/GaAs量子点的激发态发光[J].红外与毫米波学报,2019,38(5):559~565]. QIN Lu, XU Bo, XU Xing-Sheng. Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal[J]. J. Infrared Millim. Waves,2019,38(5):559~565.]
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