The electrical behavior of light modulator in GaAs/GaAlAs single quantum wen was investigated by using admittance spectroscopy technique. The physical phenomenon of delocalization in the electron and hole subbands of quantum well under electric field was observed.
周洁 封松林. GaAs／GaAlAs单量子阱光调制器电学行为[J].红外与毫米波学报,1994,13(1):65~68]. Zhou Jie, Feng Songlin, Lu Liwu, Sun Jinglan. ELECTRICAL BEHAVIOR OF LIGHT MODULATOR IN GaAS/GaAlAs SINGLE QUANTUM WELL STRUCTURE[J]. J. Infrared Millim. Waves,1994,13(1):65~68.]
