Electrical measurements (DLTS and C-V) were combined with surface analysis techniques (AES and SIMS) to study the reactions, atomic structure, the distribution of defect/impurity and the Schottky barrier heights at Pt/Si and Pt-silicides/Si interfaces. The relation between the interracial reaction and the formation of Schottky barriers is discussed in this paper in detail.
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丁孙安 许振嘉. Pt／Si界面反应与肖特基势垒形成的研究[J].红外与毫米波学报,1993,12(5):385~391]. DING SUNAN, XU ZHENJIA. STUDY OF THE RELATION BETWEEN INTERFACIAL REACTION AND FORMATION OF SCHOTTKY BARRIERS[J]. J. Infrared Millim. Waves,1993,12(5):385~391.]
