介绍了目前比较流行的两种砷化镓EL2深能级结构模型,即Bourgoinde的As_(Ga)-As_i对模型和邹元爔的As_(Ga)V_(As)V_(Ga)三元络合物模型.分别计算了这两个模型的晶格振动态密度.为EL2深能级结构的最终确定提供了一些有用的信息.
Two current configuration models of deep level native defect EL2 in GaAs, i.e. pair model As_(Ga)-As_i of Bourgoin and ternary complex As_(Ga)V_(As)V_(Ga) of Zou Yuanxi are in- troduced. The densities of vibrational state for these two models are calculated. The differ- ence between two kinds of density of state will provide useful information for final identifi- cation of the configuration of EL2.
徐文兰.砷化镓中EL2深能级结构模型的晶格振动态密度[J].红外与毫米波学报,1992,11(5):371~374]. Xu Wenlan. THE DENSITIES OF VIBRATIONAL STATE FOR CONFIGURATION MODELS OF DEEP LEVEL NATIVE DEFECT EL2 IN GaAs[J]. J. Infrared Millim. Waves,1992,11(5):371~374.]
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