In order to study the noise characteristics of InGaAs focal plane arrays (FPAs), the 160×128 FPAs based on different absorber concentration materials with the same circuit structure were designed and prepared, and the noise characteristics at different temperature and integral time were tested. By studying the relationship between different material parameters, device performance and focal plane noise, the noise characteristics of short-wave infrared InGaAs FPAs are analyzed quantitatively. The results show that the noise mainly comes from the coupling noise of the focal plane and the noise of the detector. The detector noise is influenced by the dark current and operating temperature of the detector, which determines the total noise level of the focal plane in the long integral time. To manufacture photodetectors with low dark current and low capacitance is an effective way to reduce the focal plane noise.